Explain the Differentiate Between FET and BJT ?
Explain the Differentiate between FET and BJT.
S.No |
Parameter |
               FET |
               BJT |
1. |
Full Form |
FET Stands for Field Effect Transistor. |
BJT Stands for Bipolar Junction Transistor |
2. |
Input Impedance |
Its input impedance is very high. |
Its input impedance is high. |
3. |
Controlled Device |
It is a Current controlled device. |
It is a Voltage controlled device. |
4. |
Types of Device |
It is a Uni-polar device. Because Conduction of current in FET is due to only one type of charge carriers i.e. majority carriers |
It is a Bi-polar device Because Conduction of current in BJT involves both charge carriers i.e. majority carriers as well as minority carriers. |
5. |
Transconductance. |
Low Transconductance. |
High Transconductance. |
6. |
Voltage Gain |
Low voltage gain. |
High voltage gain. |
7. |
Noise |
Noise is Lower as compared to BJT. |
Noise is higher as compared to FET. Because charge carriers have to cross two PN junctions. |
8. |
Thermal Stability |
Higher thermal stability. |
Low thermal stability. |
9. |
Transfer characteristics. |
Non Linear transfer characteristics. |
Linear transfer characteristics. |
10. |
Size |
Smaller size as compared to BJT. |
Larger size as compared to FET. |
11. |
Gain-Bandwidth product. |
Small gain-bandwidth product. |
Large gain-bandwidth product. |
BASIC ELectronics be may 2019 SUBJECT CODE 0064 DIPLOMA PAPER SOLUTION
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FET Stands for Field Effect Transistor.
BJT Stands for _______________
BJT Stands for Bipolar Junction Transistor.
Junction Field Effect Transistor.
CMOS stands for __________________
Complementary Metal Oxide Semiconductor.
Transistor is a _______ terminal semiconductor.
Three
Zener diode is made to operate in _____ Region
Zener Breakdown Region
A transistor contains______PN Junction
Two
Zener diode is made to operate in _______
Zener Breakdown.
MOSFET stands for _____________
Metal Oxide Semiconductor
The process by which an impurity is added to semiconductor is called _____
Doping.Â
The value of resistance of pn junction, when it is forward biased is ____
Low
FET is a _____ terminal semiconductor
Three
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